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MTP2P50E
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? Source Breakdown Voltage
(V GS = 0 Vdc, I D = 250 m Adc)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(V DS = 500 Vdc, V GS = 0 Vdc)
(V DS = 500 Vdc, V GS = 0 Vdc, T J = 125 ° C)
Gate ? Body Leakage Current (V GS = ± 20 Vdc, V DS = 0)
V (BR)DSS
I DSS
I GSS
500
?
?
?
?
?
564
?
?
?
?
?
10
100
100
Vdc
mV/ ° C
m Adc
nAdc
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
(V DS = V GS , I D = 250 m Adc)
Temperature Coefficient (Negative)
Static Drain ? Source On ? Resistance (V GS = 10 Vdc, I D = 1.0 Adc)
Drain ? Source On ? Voltage (V GS = 10 Vdc)
(I D = 2.0 Adc)
(I D = 1.0 Adc, T J = 125 ° C)
Forward Transconductance (V DS = 15 Vdc, I D = 1.0 Adc)
V GS(th)
R DS(on)
V DS(on)
g FS
2.0
?
?
?
?
0.5
3.0
4.0
4.5
9.5
?
?
4.0
?
6.0
14.4
12.6
?
Vdc
mV/ ° C
W
Vdc
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
C iss
?
845
1183
pF
Output Capacitance
Reverse Transfer Capacitance
(V DS = 25 Vdc, V GS = 0 Vdc,
f = 1.0 MHz)
C oss
C rss
?
?
100
26
140
52
SWITCHING CHARACTERISTICS (Note 2)
Turn ? On Delay Time
t d(on)
?
12
24
ns
Rise Time
Turn ? Off Delay Time
Fall Time
(V DD = 250 Vdc, I D = 2.0 Adc,
V GS = 10 Vdc, R G = 9.1 W )
t r
t d(off)
t f
?
?
?
14
21
19
28
42
38
Gate Charge (See Figure 8)
(V DS = 400 Vdc, I D = 2.0 Adc,
V GS = 10 Vdc)
Q T
Q 1
Q 2
Q 3
?
?
?
?
19
3.7
7.9
9.9
27
?
?
?
nC
SOURCE ? DRAIN DIODE CHARACTERISTICS
Forward On ? Voltage (Note 1)
Reverse Recovery Time
(See Figure 14)
Reverse Recovery Stored Charge
(I S = 2.0 Adc, V GS = 0 Vdc)
(I S = 2.0 Adc, V GS = 0 Vdc, T J = 125 ° C)
(I S = 2.0 Adc, V GS = 0 Vdc,
dI S /dt = 100 A/ m s)
V SD
t rr
t a
t b
Q RR
?
?
?
?
?
?
2.3
1.85
223
161
62
1.92
3.5
?
?
?
?
?
Vdc
ns
m C
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from contact screw on tab to center of die)
(Measured from the drain lead 0.25 ″ from package to center of die)
Internal Source Inductance
(Measured from the source lead 0.25 ″ from package to source bond pad)
L D
L S
?
?
?
3.5
4.5
7.5
?
?
?
nH
nH
1. Pulse Test: Pulse Width ≤ 300 m s, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
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